SI7450DP-T1-E3 VISHAY SILICONIX MOSFET N-CH 200V 3.2A PPAK SO-8 N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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| Producent | VISHAY SILICONIX | | Part Number | SI7450DP-T1-E3 (SI7450DPT1E3) |
| Specifications | MOSFET N-CH 200V 3.2A PPAK SO-8 N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
| Unit Price | 1,79 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Rds On (Max) @ Id, Vgs 80 mOhm @ 4A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
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