SI1012R-T1-GE3 VISHAY SILICONIX MOSFET, N CH, 20V, 0.6A, SOT-416

ProducentVISHAY SILICONIX
Part Number

SI1012R-T1-GE3 (SI1012RT1GE3)

Specifications

MOSFET, N CH, 20V, 0.6A, SOT-416

Unit Price1,43 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time17 weeks
Weight and Dimension0.0005 Kg
DescriptionContinuous Drain Current Id: 600mA Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.41ohm Operating Temperature Max: 150°C Power Dissipation Pd: 150mW Rds(on) Test Voltage Vgs: 4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 900mV Transistor Case Style: SOT-416 Transistor Polarity: N Channel
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