SIE822DF-T1-GE3 VISHAY SILICONIX MOSFET N-CH 20V 50A POLARPAK N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
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| Producent | VISHAY SILICONIX | | Part Number | SIE822DF-T1-GE3 (SIE822DFT1GE3) |
| Specifications | MOSFET N-CH 20V 50A POLARPAK N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S) |
| Unit Price | 2,43 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs 3.4 mOhm @ 18.3A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (S) Package / Case 10-PolarPAK® (S) |
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