SIR890DP-T1-GE3 VISHAY SILICONIX MOSFET, N, SO-8
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| Producent | VISHAY SILICONIX | | Part Number | SIR890DP-T1-GE3 (SIR890DPT1GE3) |
| Specifications | MOSFET, N, SO-8 |
| Unit Price | 5,39 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 20 weeks |
| Weight and Dimension | 0.0004 Kg |
| Description | Continuous Drain Current Id: 50A Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0029ohm Operating Temperature Max: 150°C Power Dissipation Pd: 5W Rds(on) Test Voltage Vgs: 20V SVHC: To Be Advised Threshold Voltage Vgs: 2.6V Transistor Case Style: SOIC Transistor Polarity: N Channel |
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