SI3464DV-T1-GE3 VISHAY SILICONIX MOSFET N-CH 20V 8A 6-TSOP N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP

ProducentVISHAY SILICONIX
Part Number

SI3464DV-T1-GE3 (SI3464DVT1GE3)

Specifications

MOSFET N-CH 20V 8A 6-TSOP N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP

Unit Price0,54 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1065pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs 24 mOhm @ 7.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
Datasheets
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