SI8800EDB-T2-E1 VISHAY SILICONIX MOSFET N-CH 20V MICROFOOT N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
| |
|
Producent | VISHAY SILICONIX | Part Number | SI8800EDB-T2-E1 (SI8800EDBT2E1) |
Specifications | MOSFET N-CH 20V MICROFOOT N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot |
Unit Price | 0,47 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 105 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 500mW (Ta) Rds On (Max) @ Id, Vgs 80 mOhm @ 1A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA |
Datasheets | |
E-shop Coming Soon
| |
E-shop Coming Soon
| |
Related Parts
| |
|