SI7434DP-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK

ProducentVISHAY SILICONIX
Part Number

SI7434DP-T1-GE3 (SI7434DPT1GE3)

Specifications

MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK

Unit Price3,60 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time28 weeks
Weight and Dimension0.002 Kg
DescriptionContinuous Drain Current Id: 3.8A Drain Source Voltage Vds: 250V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.129ohm Operating Temperature Max: 150°C Power Dissipation Pd: 5.2W Rds(on) Test Voltage Vgs: 10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 4V Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel
Datasheets
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