SI4778DY-T1-GE3 VISHAY SILICONIX MOSFET N-CH 25V 8A 8-SOIC N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
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| Producent | VISHAY SILICONIX | | Part Number | SI4778DY-T1-GE3 (SI4778DYT1GE3) |
| Specifications | MOSFET N-CH 25V 8A 8-SOIC N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO |
| Unit Price | 0,59 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 13V Vgs (Max) ±16V FET Feature - Power Dissipation (Max) 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs 23 mOhm @ 7A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
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