SI4162DY-T1-GE3 VISHAY SILICONIX MOSFET,N CH,30V,19.3A,SO8
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| Producent | VISHAY SILICONIX | | Part Number | SI4162DY-T1-GE3 (SI4162DYT1GE3) |
| Specifications | MOSFET,N CH,30V,19.3A,SO8 |
| Unit Price | 18,43 EUR |
| Minimum Order Quantity | 150 |
| Tariff No. | 85412900 |
| Lead Time | 17 weeks |
| Weight and Dimension | 0.0005 Kg |
| Description | Continuous Drain Current Id: 19.3A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0065ohm Operating Temperature Max: 150°C Power Dissipation Pd: 2.5W Rds(on) Test Voltage Vgs: 10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 1V Transistor Case Style: SOIC Transistor Polarity: N Channel |
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