SI2334DS-T1-GE3 VISHAY SILICONIX MOSFET,N CH,30V,4.9A,DIODE,SOT23

ProducentVISHAY SILICONIX
Part Number

SI2334DS-T1-GE3 (SI2334DST1GE3)

Specifications

MOSFET,N CH,30V,4.9A,DIODE,SOT23

Unit Price5,49 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time17 weeks
Weight and Dimension0.0000 Kg
DescriptionContinuous Drain Current Id: 4.9A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.035ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.3W Rds(on) Test Voltage Vgs: 4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 400mV Transistor Case Style: SOT-23 Transistor Polarity: N Channel
Datasheets
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