SI2336DS-T1-GE3 VISHAY SILICONIX MOSFET,N CH,30V,5.2A,DIODE,SOT23
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Producent | VISHAY SILICONIX | Part Number | SI2336DS-T1-GE3 (SI2336DST1GE3) |
Specifications | MOSFET,N CH,30V,5.2A,DIODE,SOT23 |
Unit Price | 3,58 EUR |
Minimum Order Quantity | 1 |
Tariff No. | 85412900 |
Lead Time | 17 weeks |
Weight and Dimension | 0.0000 Kg |
Description | Continuous Drain Current Id: 5.2A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.034ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.8W Rds(on) Test Voltage Vgs: 4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 400mV Transistor Case Style: SOT-23 Transistor Polarity: N Channel |
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