SI2338DS-T1-GE3 VISHAY SILICONIX MOSFET N-CH 30V 6A SOT23 N-Channel 30V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23
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| Producent | VISHAY SILICONIX | | Part Number | SI2338DS-T1-GE3 (SI2338DST1GE3) |
| Specifications | MOSFET N-CH 30V 6A SOT23 N-Channel 30V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23 |
| Unit Price | 0,54 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 424pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs 28 mOhm @ 5.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
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