SI7116DN-T1-GE3 VISHAY SILICONIX MOSFET N-CH 40V 10.5A 1212-8 N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

ProducentVISHAY SILICONIX
Part Number

SI7116DN-T1-GE3 (SI7116DNT1GE3)

Specifications

MOSFET N-CH 40V 10.5A 1212-8 N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Unit Price2,15 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Rds On (Max) @ Id, Vgs 7.8 mOhm @ 16.4A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
Datasheets
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