SIHB12N60E-GE3 VISHAY SILICONIX MOSFET, N-CH, 600V, 12A, TO-263
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| Producent | VISHAY SILICONIX | | Part Number | SIHB12N60E-GE3 (SIHB12N60EGE3) |
| Specifications | MOSFET, N-CH, 600V, 12A, TO-263 |
| Unit Price | 16,06 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 14 weeks |
| Weight and Dimension | 0.0001 Kg |
| Description | Continuous Drain Current Id: 12A Drain Source Voltage Vds: 600V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.32ohm Operating Temperature Max: 150°C Power Dissipation Pd: 147W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: TO-263 Transistor Polarity: N Channel |
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