SIHB22N60E-E3 VISHAY SILICONIX MOSFET N-CH 600V 21A D2PAK N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK
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| Producent | VISHAY SILICONIX | | Part Number | SIHB22N60E-E3 (SIHB22N60EE3) |
| Specifications | MOSFET N-CH 600V 21A D2PAK N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK |
| Unit Price | 4,02 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 133 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 227W (Tc) Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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