SIHB22N60E-GE3 VISHAY SILICONIX MOSFET, N CH, 600V, 21A, D2PAK

ProducentVISHAY SILICONIX
Part Number

SIHB22N60E-GE3 (SIHB22N60EGE3)

Specifications

MOSFET, N CH, 600V, 21A, D2PAK

Unit Price14,09 EUR
Minimum Order Quantity1
Tariff No.85044090
Lead Time14 weeks
Weight and Dimension0.0014 Kg
DescriptionContinuous Drain Current Id: 21A Drain Source Voltage Vds: 600V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.15ohm Operating Temperature Max: 150°C Power Dissipation Pd: 227W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: TO-263 Transistor Polarity: N Channel
Datasheets
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