SIHW70N60EF-GE3 VISHAY SILICONIX MOSFET N-CH 600V 70A TO-247AD N-Channel 600V 70A (Tc) 520W (Tc) Through Hole TO-247AD
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| Producent | VISHAY SILICONIX | | Part Number | SIHW70N60EF-GE3 (SIHW70N60EFGE3) |
| Specifications | MOSFET N-CH 600V 70A TO-247AD N-Channel 600V 70A (Tc) 520W (Tc) Through Hole TO-247AD |
| Unit Price | 9,72 EUR |
| Minimum Order Quantity | 480 |
| Tariff No. | |
| Lead Time | 154 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 100V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 520W (Tc) Rds On (Max) @ Id, Vgs 38 mOhm @ 35A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-247-3 |
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