SIHD7N60E-E3 VISHAY SILICONIX MOSFET N-CH 600V 7A TO-252 N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)
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| Producent | VISHAY SILICONIX | | Part Number | SIHD7N60E-E3 (SIHD7N60EE3) |
| Specifications | MOSFET N-CH 600V 7A TO-252 N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA) |
| Unit Price | 0,95 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 133 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V FET Feature - Power Dissipation (Max) 78W (Tc) Rds On (Max) @ Id, Vgs 600 mOhm @ 3.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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