SIHB12N65E-GE3 VISHAY SILICONIX MOSFET, N CH, 650V, 12A, TO-263-3
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| Producent | VISHAY SILICONIX | | Part Number | SIHB12N65E-GE3 (SIHB12N65EGE3) |
| Specifications | MOSFET, N CH, 650V, 12A, TO-263-3 |
| Unit Price | 21,42 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | |
| Weight and Dimension | 0.0014 Kg |
| Description | Continuous Drain Current Id: 12A Drain Source Voltage Vds: 650V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.33ohm Operating Temperature Max: 150°C Power Dissipation Pd: 156W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: - Transistor Case Style: TO-263 Transistor Polarity: N Channel |
| Datasheets | |
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