SIR826DP-T1-GE3 VISHAY SILICONIX MOSFET, N CH, DIO, 80V, 60A, PPK SO8

ProducentVISHAY SILICONIX
Part Number

SIR826DP-T1-GE3 (SIR826DPT1GE3)

Specifications

MOSFET, N CH, DIO, 80V, 60A, PPK SO8

Unit Price14,00 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time34 weeks
Weight and Dimension0.0005 Kg
DescriptionContinuous Drain Current Id: 60A Drain Source Voltage Vds: 80V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.004ohm Operating Temperature Max: 150°C Power Dissipation Pd: 104W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.2V Transistor Case Style: SOIC Transistor Polarity: N Channel
Datasheets
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