SQ2360EES-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DI & ESD,60V,4.4A,SOT23
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| Producent | VISHAY SILICONIX | | Part Number | SQ2360EES-T1-GE3 (SQ2360EEST1GE3) |
| Specifications | MOSFET,N CH,DI & ESD,60V,4.4A,SOT23 |
| Unit Price | 0,61 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 28 weeks |
| Weight and Dimension | 0.0000 Kg |
| Description | Continuous Drain Current Id: 4.4A Drain Source Voltage Vds: 60V MSL: - No. of Pins: 3 On Resistance Rds(on): 0.058ohm Operating Temperature Max: 175°C Power Dissipation Pd: 3W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.5V Transistor Case Style: TO-236 Transistor Polarity: N Channel |
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