SIR814DP-T1-GE3 VISHAY SILICONIX MOSFET, N CH, DIO, 40V, 60A, PPK SO8
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| Producent | VISHAY SILICONIX | | Part Number | SIR814DP-T1-GE3 (SIR814DPT1GE3) |
| Specifications | MOSFET, N CH, DIO, 40V, 60A, PPK SO8 |
| Unit Price | 14,83 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | |
| Weight and Dimension | 0.0005 Kg |
| Description | Continuous Drain Current Id: 60A Drain Source Voltage Vds: 40V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0017ohm Operating Temperature Max: 150°C Power Dissipation Pd: 104W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1V Transistor Case Style: SOIC Transistor Polarity: N Channel |
| Datasheets | |
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