SIB410DK-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DIODE,30V,9A,SC75 PPAK

ProducentVISHAY SILICONIX
Part Number

SIB410DK-T1-GE3 (SIB410DKT1GE3)

Specifications

MOSFET,N CH,DIODE,30V,9A,SC75 PPAK

Unit Price11,50 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time17 weeks
Weight and Dimension0.002 Kg
DescriptionContinuous Drain Current Id: 9A Drain Source Voltage Vds: 30V MSL: - No. of Pins: 6 On Resistance Rds(on): 0.034ohm Operating Temperature Max: 150°C Power Dissipation Pd: 2.5W Rds(on) Test Voltage Vgs: 4.5V SVHC: To Be Advised Threshold Voltage Vgs: 400mV Transistor Case Style: PowerPAK SC75 Transistor Polarity: N Channel
Datasheets
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