SQD50N06-07L-GE3 VISHAY SILICONIX MOSFET,N CH,W DIODE,60V,50A,TO-252
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| Producent | VISHAY SILICONIX | | Part Number | SQD50N06-07L-GE3 (SQD50N0607LGE3) |
| Specifications | MOSFET,N CH,W DIODE,60V,50A,TO-252 |
| Unit Price | 9,94 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 28 weeks |
| Weight and Dimension | 0.0003 Kg |
| Description | Continuous Drain Current Id: 50A Drain Source Voltage Vds: 60V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.0064ohm Operating Temperature Max: 175°C Power Dissipation Pd: 136W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: TO-252 Transistor Polarity: N Channel |
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