SIA467EDJ-T1-GE3 VISHAY SILICONIX MOSFET P-CH 12V 31A SC70-6 P-Channel 12V 31A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

ProducentVISHAY SILICONIX
Part Number

SIA467EDJ-T1-GE3 (SIA467EDJT1GE3)

Specifications

MOSFET P-CH 12V 31A SC70-6 P-Channel 12V 31A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Unit Price0,51 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 6V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs 13 mOhm @ 5A, 4.5V Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
Datasheets
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