SI5475DDC-T1-GE3 VISHAY SILICONIX MOSFET P-CH 12V 6A 1206-8 P-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™
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| Producent | VISHAY SILICONIX | | Part Number | SI5475DDC-T1-GE3 (SI5475DDCT1GE3) |
| Specifications | MOSFET P-CH 12V 6A 1206-8 P-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™ |
| Unit Price | 0,65 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 6V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs 32 mOhm @ 5.4A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
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