SI2325DS-T1-GE3 VISHAY SILICONIX MOSFET, P-CH, -150V, -0.53A, SOT-23-3

ProducentVISHAY SILICONIX
Part Number

SI2325DS-T1-GE3 (SI2325DST1GE3)

Specifications

MOSFET, P-CH, -150V, -0.53A, SOT-23-3

Unit Price11,65 EUR
Minimum Order Quantity150
Tariff No.85411000
Lead Time
Weight and Dimension0.0003 Kg
DescriptionContinuous Drain Current Id: -530mA Drain Source Voltage Vds: -150V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 1ohm Operating Temperature Max: 150°C Power Dissipation Pd: 750mW Rds(on) Test Voltage Vgs: -10V SVHC: To Be Advised Threshold Voltage Vgs: -4.5V Transistor Case Style: SOT-23 Transistor Polarity: P Channel
Datasheets
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