SI2301BDS-T1-E3 VISHAY SILICONIX MOSFET, P, SOT-23
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| Producent | VISHAY SILICONIX | | Part Number | SI2301BDS-T1-E3 (SI2301BDST1E3) |
| Specifications | MOSFET, P, SOT-23 |
| Unit Price | 10,43 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 26 weeks |
| Weight and Dimension | 0.0001 Kg |
| Description | Continuous Drain Current Id: -2.4A Drain Source Voltage Vds: -20V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): Operating Temperature Max: 150°C Power Dissipation Pd: 900mW Rds(on) Test Voltage Vgs: -4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -950mV Transistor Case Style: SOT-23 Transistor Polarity: P Channel |
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