SI2301BDS-T1-GE3 VISHAY SILICONIX P CH MOSFET

ProducentVISHAY SILICONIX
Part Number

SI2301BDS-T1-GE3 (SI2301BDST1GE3)

Specifications

P CH MOSFET

Unit Price19,30 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time82 weeks
Weight and Dimension0.0000 Kg
DescriptionContinuous Drain Current Id: -2.2A Drain Source Voltage Vds: -20V MSL: - No. of Pins: 3 On Resistance Rds(on): 0.08ohm Operating Temperature Max: 150°C Power Dissipation Pd: 700mW Rds(on) Test Voltage Vgs: -4.5V SVHC: To Be Advised Threshold Voltage Vgs: -950mV Transistor Case Style: SOT-23 Transistor Polarity: P Channel
Datasheets
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