SI4829DY-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 2A 8-SOIC P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO
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| Producent | VISHAY SILICONIX | | Part Number | SI4829DY-T1-GE3 (SI4829DYT1GE3) |
| Specifications | MOSFET P-CH 20V 2A 8-SOIC P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO |
| Unit Price | 0,18 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 98 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs 215 mOhm @ 2.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
| Datasheets | |
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