SI7629DN-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 35A 1212-8 PPAK P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
| |
|
| Producent | VISHAY SILICONIX | | Part Number | SI7629DN-T1-GE3 (SI7629DNT1GE3) |
| Specifications | MOSFET P-CH 20V 35A 1212-8 PPAK P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Unit Price | 0,97 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 182 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5790pF @ 10V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs 4.6 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
