SI5913DC-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 4A 1206-8 P-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™
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| Producent | VISHAY SILICONIX | | Part Number | SI5913DC-T1-GE3 (SI5913DCT1GE3) |
| Specifications | MOSFET P-CH 20V 4A 1206-8 P-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™ |
| Unit Price | 0,22 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.7W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs 84 mOhm @ 3.7A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
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