SI3443CDV-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 5.97A 6TSOP P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
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| Producent | VISHAY SILICONIX | | Part Number | SI3443CDV-T1-GE3 (SI3443CDVT1GE3) |
| Specifications | MOSFET P-CH 20V 5.97A 6TSOP P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP |
| Unit Price | 0,41 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.97A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 2W (Ta), 3.2W (Tc) Rds On (Max) @ Id, Vgs 60 mOhm @ 4.7A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
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