SI3407DV-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 8A 6-TSOP P-Channel 20V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
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| Producent | VISHAY SILICONIX | | Part Number | SI3407DV-T1-GE3 (SI3407DVT1GE3) |
| Specifications | MOSFET P-CH 20V 8A 6-TSOP P-Channel 20V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP |
| Unit Price | 0,53 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 10V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 4.2W (Tc) Rds On (Max) @ Id, Vgs 24 mOhm @ 7.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
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