SI8817DB-T2-E1 VISHAY SILICONIX MOSFET P-CH 20V MICROFOOT P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
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| Producent | VISHAY SILICONIX | | Part Number | SI8817DB-T2-E1 (SI8817DBT2E1) |
| Specifications | MOSFET P-CH 20V MICROFOOT P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot |
| Unit Price | 0,44 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 615pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 500mW (Ta) Rds On (Max) @ Id, Vgs 76 mOhm @ 1A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA |
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