SIS413DN-T1-GE3 VISHAY SILICONIX MOSFET P-CH 30V 18A PPAK 1212-8 P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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| Producent | VISHAY SILICONIX | | Part Number | SIS413DN-T1-GE3 (SIS413DNT1GE3) |
| Specifications | MOSFET P-CH 30V 18A PPAK 1212-8 P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Unit Price | 0,63 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs 9.4 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
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