SI2303CDS-T1-E3 VISHAY SILICONIX MOSFET P-CH 30V 2.7A SOT23-3 P-Channel 30V 2.7A (Tc) 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
| |
|
| Producent | VISHAY SILICONIX | | Part Number | SI2303CDS-T1-E3 (SI2303CDST1E3) |
| Specifications | MOSFET P-CH 30V 2.7A SOT23-3 P-Channel 30V 2.7A (Tc) 2.3W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Unit Price | 0,46 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.3W (Tc) Rds On (Max) @ Id, Vgs 190 mOhm @ 1.9A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
