SI4101DY-T1-GE3 VISHAY SILICONIX MOSFET P-CH 30V 25.7A 8SOIC P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO
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| Producent | VISHAY SILICONIX | | Part Number | SI4101DY-T1-GE3 (SI4101DYT1GE3) |
| Specifications | MOSFET P-CH 30V 25.7A 8SOIC P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO |
| Unit Price | 0,83 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 25.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8190pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 6W (Tc) Rds On (Max) @ Id, Vgs 6 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
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