SIA817EDJ-T1-GE3 VISHAY SILICONIX MOSFET P-CH 30V 4.5A SC-70-6 P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
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| Producent | VISHAY SILICONIX | | Part Number | SIA817EDJ-T1-GE3 (SIA817EDJT1GE3) |
| Specifications | MOSFET P-CH 30V 4.5A SC-70-6 P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Unit Price | 0,42 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V Vgs (Max) ±12V FET Feature Schottky Diode (Body) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs 65 mOhm @ 3A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |
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