SI7135DP-T1-GE3 VISHAY SILICONIX MOSFET P-CH 30V 60A PPAK SO-8 P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

ProducentVISHAY SILICONIX
Part Number

SI7135DP-T1-GE3 (SI7135DPT1GE3)

Specifications

MOSFET P-CH 30V 60A PPAK SO-8 P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Unit Price1,86 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8650pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs 3.9 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
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