SI2319DS-T1-E3 VISHAY SILICONIX MOSFET,P CH,40V,2.3A,SOT23-3
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| Producent | VISHAY SILICONIX | | Part Number | SI2319DS-T1-E3 (SI2319DST1E3) |
| Specifications | MOSFET,P CH,40V,2.3A,SOT23-3 |
| Unit Price | 16,58 EUR |
| Minimum Order Quantity | 5 |
| Tariff No. | 85412900 |
| Lead Time | 19 weeks |
| Weight and Dimension | 0.002 Kg |
| Description | Continuous Drain Current Id: -3A Drain Source Voltage Vds: -40V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): Operating Temperature Max: 150°C Power Dissipation Pd: 750mW Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -3V Transistor Case Style: SOT-23 Transistor Polarity: P Channel |
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