SI2309CDS-T1-GE3 VISHAY SILICONIX MOSFET, P CH, -60V, -1.6A, SOT-23-3
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Producent | VISHAY SILICONIX | Part Number | SI2309CDS-T1-GE3 (SI2309CDST1GE3) |
Specifications | MOSFET, P CH, -60V, -1.6A, SOT-23-3 |
Unit Price | 18,27 EUR |
Minimum Order Quantity | 1 |
Tariff No. | 85412900 |
Lead Time | 18 weeks |
Weight and Dimension | 0 Kg |
Description | Continuous Drain Current Id: -1.6A Drain Source Voltage Vds: -60V MSL: - No. of Pins: 3 On Resistance Rds(on): 0.36ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.7W Rds(on) Test Voltage Vgs: -4.5V SVHC: To Be Advised Threshold Voltage Vgs: -1V Transistor Case Style: SOT-23 Transistor Polarity: P Channel |
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