SUD19P06-60-E3 VISHAY SILICONIX MOSFET P-CH 60V 18.3A TO252 P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak)
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| Producent | VISHAY SILICONIX | | Part Number | SUD19P06-60-E3 (SUD19P0660E3) |
| Specifications | MOSFET P-CH 60V 18.3A TO252 P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak) |
| Unit Price | 1,10 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs 60 mOhm @ 10A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheets | |
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