SQD19P06-60L-GE3 VISHAY SILICONIX MOSFET,P CH,W DIODE,60V,20A,TO-252

ProducentVISHAY SILICONIX
Part Number

SQD19P06-60L-GE3 (SQD19P0660LGE3)

Specifications

MOSFET,P CH,W DIODE,60V,20A,TO-252

Unit Price7,75 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time28 weeks
Weight and Dimension0.0003 Kg
DescriptionContinuous Drain Current Id: -20A Drain Source Voltage Vds: -60V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.046ohm Operating Temperature Max: 175°C Power Dissipation Pd: 46W Rds(on) Test Voltage Vgs: -10V SVHC: To Be Advised Threshold Voltage Vgs: -1.5V Transistor Case Style: TO-252 Transistor Polarity: P Channel
Datasheets
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