SI9407BDY-T1-GE3 VISHAY SILICONIX MOSFET, P CH, 60V, 4.7A, 8SOIC
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| Producent | VISHAY SILICONIX | | Part Number | SI9407BDY-T1-GE3 (SI9407BDYT1GE3) |
| Specifications | MOSFET, P CH, 60V, 4.7A, 8SOIC |
| Unit Price | 12,95 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 22 weeks |
| Weight and Dimension | 0.0001 Kg |
| Description | Continuous Drain Current Id: -4.7A Drain Source Voltage Vds: -60V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.1ohm Operating Temperature Max: 150°C Power Dissipation Pd: 5W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -3V Transistor Case Style: SOIC Transistor Polarity: P Channel |
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