SI1489EDH-T1-GE3 VISHAY SILICONIX MOSFET P-CH 8V 2A SOT-363 P-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SOT-363
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| Producent | VISHAY SILICONIX | | Part Number | SI1489EDH-T1-GE3 (SI1489EDHT1GE3) |
| Specifications | MOSFET P-CH 8V 2A SOT-363 P-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SOT-363 |
| Unit Price | 0,37 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±5V FET Feature - Power Dissipation (Max) 2.8W (Tc) Rds On (Max) @ Id, Vgs 48 mOhm @ 3A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
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