SI4459ADY-T1-GE3 VISHAY SILICONIX MOSFET,P CH,DIODE,30V,29A,8-SOIC

ProducentVISHAY SILICONIX
Part Number

SI4459ADY-T1-GE3 (SI4459ADYT1GE3)

Specifications

MOSFET,P CH,DIODE,30V,29A,8-SOIC

Unit Price15,49 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time20 weeks
Weight and Dimension0.0005 Kg
DescriptionContinuous Drain Current Id: -29A Drain Source Voltage Vds: -30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0039ohm Operating Temperature Max: 150°C Power Dissipation Pd: 3.5W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -2.5V Transistor Case Style: SOIC Transistor Polarity: P Channel
Datasheets
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