SI4431CDY-T1-GE3 VISHAY SILICONIX MOSFET,P CH,DIODE,30V,9A,8-SOIC
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| Producent | VISHAY SILICONIX | | Part Number | SI4431CDY-T1-GE3 (SI4431CDYT1GE3) |
| Specifications | MOSFET,P CH,DIODE,30V,9A,8-SOIC |
| Unit Price | 8,74 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 17 weeks |
| Weight and Dimension | 0.0005 Kg |
| Description | Continuous Drain Current Id: -9A Drain Source Voltage Vds: -30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.026ohm Operating Temperature Max: 150°C Power Dissipation Pd: 4.2W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -2.5V Transistor Case Style: SOIC Transistor Polarity: P Channel |
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