SI2399DS-T1-GE3 VISHAY SILICONIX MOSFET, P CH, W/D, 20V, 6A, SOT23

ProducentVISHAY SILICONIX
Part Number

SI2399DS-T1-GE3 (SI2399DST1GE3)

Specifications

MOSFET, P CH, W/D, 20V, 6A, SOT23

Unit Price1,45 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time17 weeks
Weight and Dimension0.0000 Kg
DescriptionContinuous Drain Current Id: -6A Drain Source Voltage Vds: -20V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.028ohm Operating Temperature Max: 150°C Power Dissipation Pd: 2.5W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -600mV Transistor Case Style: TO-236 Transistor Polarity: P Channel
Datasheets
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