SI3458BDV-T1-GE3 VISHAY SILICONIX N CH MOSFET
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| Producent | VISHAY SILICONIX | | Part Number | SI3458BDV-T1-GE3 (SI3458BDVT1GE3) |
| Specifications | N CH MOSFET |
| Unit Price | 19,55 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 49 weeks |
| Weight and Dimension | 0 Kg |
| Description | Continuous Drain Current Id: 3.2A Drain Source Voltage Vds: 60V MSL: MSL 1 - Unlimited No. of Pins: 6 On Resistance Rds(on): 0.082ohm Operating Temperature Max: 150°C Power Dissipation Pd: 2W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 3V Transistor Case Style: TSOP Transistor Polarity: N Channel |
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